STB60NF06

Symbol Micros: TSTB60NF06

59955

TSTB60NF06

Contractor Symbol:

Case : TO263 (D2PAK)

Datasheet

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N-MOSFET 60A 60V 110W 0.016Ω STB60NF06T4

Parameters

Open channel resistance:	16mOhm
Max. drain current:	60A
Max. power loss:	110W
Case:	TO263 (D2PAK)
Manufacturer:	STMicroelectronics
Max. drain-source voltage:	60V
Max. drain-gate voltage:	60V

All parameters

Manufacturer:: ST Manufacturer part number: STB60NF06T4 Case style: TO263 (D2PAK)  

External warehouse:

44000 pcs.

Quantity of pcs.	1000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,7050

Add inquiry (RFQ)

Packaging:
1000

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

Manufacturer:: ST Manufacturer part number: STB60NF06T4 Case style: TO263 (D2PAK)  

External warehouse:

2000 pcs.

Quantity of pcs.	1000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,7045

Add to comparison tool Add inquiry (RFQ)

Packaging:
1000

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	16mOhm
Max. drain current:	60A
Max. power loss:	110W
Case:	TO263 (D2PAK)
Manufacturer:	STMicroelectronics
Max. drain-source voltage:	60V
Max. drain-gate voltage:	60V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-65°C ~ 175°C
Mounting:	SMD

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