STB7NK80Z

Symbol Micros: TSTB7NK80Z
Contractor Symbol:
Case : TO263 (D2PAK)
Transistor N-Channel MOSFET; 800V; 30V; 1,8Ohm; 5,2A; 125W; -55°C ~ 150°C; STB7NK80ZT4
Parameters
Open channel resistance: 1,8Ohm
Max. drain current: 5,2A
Max. power loss: 125W
Case: TO263 (D2PAK)
Manufacturer: STMicroelectronics
Max. drain-source voltage: 800V
Transistor type: N-MOSFET
Manufacturer:: ST Manufacturer part number: STB7NK80ZT4 RoHS Case style: TO263t/r (D2PAK) Datasheet
In stock:
8 pcs.
Quantity of pcs. 1+ 3+ 10+ 30+ 100+
Net price (EUR) 2,6966 2,1948 1,9040 1,7657 1,6860
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Packaging:
10
Manufacturer:: ST Manufacturer part number: STB7NK80ZT4 Case style: TO263 (D2PAK)  
External warehouse:
1000 pcs.
Quantity of pcs. 1000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 1,6860
Add to comparison tool
Packaging:
1000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: ST Manufacturer part number: STB7NK80ZT4 Case style: TO263 (D2PAK)  
External warehouse:
5000 pcs.
Quantity of pcs. 1000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 1,6860
Add to comparison tool
Packaging:
1000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Open channel resistance: 1,8Ohm
Max. drain current: 5,2A
Max. power loss: 125W
Case: TO263 (D2PAK)
Manufacturer: STMicroelectronics
Max. drain-source voltage: 800V
Transistor type: N-MOSFET
Max. gate-source Voltage: 30V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD