STD1NK60T4 STMicroelectronics

Symbol Micros: TSTD1NK60t4
Contractor Symbol:
Case : TO252 (DPACK)
N-MOSFET 600V 1A 8.5mΩ 30W
Parameters
Open channel resistance: 8,5Ohm
Max. drain current: 1A
Max. power loss: 30W
Case: TO252 (DPAK)
Manufacturer: ST
Max. drain-source voltage: 600V
Max. drain-gate voltage: 600V
Manufacturer:: ST Manufacturer part number: STD1NK60T4 Case style: TO252 (DPACK)  
External warehouse:
250000 pcs.
Quantity of pcs. 2500+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,1514
Add to comparison tool
Packaging:
2500
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: ST Manufacturer part number: STD1NK60T4 Case style: TO252 (DPACK)  
External warehouse:
165000 pcs.
Quantity of pcs. 2500+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,1439
Add to comparison tool
Packaging:
2500
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: ST Manufacturer part number: STD1NK60T4 Case style: TO252 (DPACK)  
External warehouse:
25000 pcs.
Quantity of pcs. 2500+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,1485
Add to comparison tool
Packaging:
2500
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Open channel resistance: 8,5Ohm
Max. drain current: 1A
Max. power loss: 30W
Case: TO252 (DPAK)
Manufacturer: ST
Max. drain-source voltage: 600V
Max. drain-gate voltage: 600V
Transistor type: N-MOSFET
Max. gate-source Voltage: 30V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD