STD25NF10 DPAK

Symbol Micros: TSTD25nf10

85716

TSTD25nf10

Contractor Symbol:

Case : DPAK

Datasheet

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N-MOSFET 100V 25A 100W 0.035Ω

Parameters

Open channel resistance:	38mOhm
Max. drain current:	25A
Max. power loss:	100W
Case:	DPAK
Manufacturer:	STMicroelectronics
Max. drain-source voltage:	100V
Max. drain-gate voltage:	100V

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• Parameters

Open channel resistance:	38mOhm
Max. drain current:	25A
Max. power loss:	100W
Case:	DPAK
Manufacturer:	STMicroelectronics
Max. drain-source voltage:	100V
Max. drain-gate voltage:	100V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	SMD

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