STD3NK80Z-1

Symbol Micros: TSTD3NK80z1
Contractor Symbol:
Case : IPAK
Transistor N-MOSFET; 800V; 800V; 30V; 4,5Ohm; 2,5A; 70W; -55°C ~ 150°C;
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Parameters
Open channel resistance: 4,5Ohm
Max. drain current: 2,5A
Max. power loss: 70W
Case: IPAK
Manufacturer: STMicroelectronics
Max. drain-source voltage: 800V
Max. drain-gate voltage: 800V
Manufacturer:: ST Manufacturer part number: STD3NK80Z-1 RoHS Case style: IPAK Datasheet
In stock:
141 pcs.
Quantity of pcs. 1+ 5+ 20+ 75+ 300+
Net price (EUR) 0,9276 0,6145 0,5070 0,4626 0,4416
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Packaging:
75/525
Open channel resistance: 4,5Ohm
Max. drain current: 2,5A
Max. power loss: 70W
Case: IPAK
Manufacturer: STMicroelectronics
Max. drain-source voltage: 800V
Max. drain-gate voltage: 800V
Transistor type: N-MOSFET
Max. gate-source Voltage: 30V
Operating temperature (range): -55°C ~ 150°C
Mounting: THT