STGB10NC60HD

Symbol Micros: TSTGB10nc60hd
Contractor Symbol:
Case : D2PAK
Trans IGBT Chip N-CH 600V 20A 65000mW 3-Pin(2+Tab) D2PAK
Parameters
Gate charge: 19,2nC
Max. dissipated power: 65W
Max. collector current: 20A
Max collector current (impulse): 30A
Forvard volatge [Vgeth]: 3,75V ~ 5,75V
Case: D2PAK
Manufacturer: STMicroelectronics
Manufacturer:: ST Manufacturer part number: STGB10NC60HDT4 Case style: D2PAK  
External warehouse:
1000 pcs.
Quantity of pcs. 1000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,8406
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Packaging:
1000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: ST Manufacturer part number: STGB10NC60HDT4 Case style: D2PAK  
External warehouse:
870 pcs.
Quantity of pcs. 1+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,9975
Add to comparison tool
Packaging:
1
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Gate charge: 19,2nC
Max. dissipated power: 65W
Max. collector current: 20A
Max collector current (impulse): 30A
Forvard volatge [Vgeth]: 3,75V ~ 5,75V
Case: D2PAK
Manufacturer: STMicroelectronics
Collector-emitter voltage: 600V
Operating temperature (range): -55°C ~ 150°C
Gate-emitter voltage: 20V