STGD10NC60KDT4 STMicroelectronics

Symbol Micros: TSTGD10nc60kdt4

112962

TSTGD10nc60kdt4

Contractor Symbol:

Case : DPAK

Datasheet

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IGBT 600V 20A 62W

Parameters

Gate charge:	19nC
Max. dissipated power:	62W
Max. collector current:	20A
Max collector current (impulse):	30A
Forvard volatge [Vgeth]:	4,5V ~ 6,5V
Case:	DPAK
Manufacturer:	STMicroelectronics

All parameters

Manufacturer:: ST Manufacturer part number: STGD10NC60KDT4 RoHS Case style: DPAK t/r Datasheet

In stock:

20 pcs.

Quantity of pcs.	1+	5+	20+	89+	356+
Net price (EUR)	1,6224	1,1366	0,9643	0,8854	0,8543

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Packaging:
89 Quantity (multiple: 1)

- +

Manufacturer:: ST Manufacturer part number: STGD10NC60KDT4 Case style: DPAK  

External warehouse:

7500 pcs.

Quantity of pcs.	2500+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,8543

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Packaging:
2500

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Gate charge:	19nC
Max. dissipated power:	62W
Max. collector current:	20A
Max collector current (impulse):	30A
Forvard volatge [Vgeth]:	4,5V ~ 6,5V
Case:	DPAK
Manufacturer:	STMicroelectronics
Collector-emitter voltage:	600V
Operating temperature (range):	-55°C ~ 150°C
Gate-emitter voltage:	20V
Mounting:	SMD

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