STGD10NC60KDT4 STMicroelectronics

Symbol Micros: TSTGD10nc60kdt4
Contractor Symbol:
Case : DPAK
IGBT 600V 20A 62W
Parameters
Gate charge: 19nC
Max. dissipated power: 62W
Max. collector current: 20A
Max collector current (impulse): 30A
Forvard volatge [Vgeth]: 4,5V ~ 6,5V
Case: DPAK
Manufacturer: STMicroelectronics
Manufacturer:: ST Manufacturer part number: STGD10NC60KDT4 RoHS Case style: DPAK t/r Datasheet
In stock:
30 pcs.
Quantity of pcs. 1+ 5+ 20+ 89+ 267+
Net price (EUR) 1,5498 1,1483 1,0027 0,9346 0,9111
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Packaging:
89
Gate charge: 19nC
Max. dissipated power: 62W
Max. collector current: 20A
Max collector current (impulse): 30A
Forvard volatge [Vgeth]: 4,5V ~ 6,5V
Case: DPAK
Manufacturer: STMicroelectronics
Collector-emitter voltage: 600V
Operating temperature (range): -55°C ~ 150°C
Gate-emitter voltage: 20V
Mounting: SMD