STGD10NC60KDT4 STMicroelectronics

Symbol Micros: TSTGD10nc60kdt4
Contractor Symbol:
Case : DPAK
IGBT 600V 20A 62W
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Parameters
Gate charge: 19nC
Max. dissipated power: 62W
Max. collector current: 20A
Max collector current (impulse): 30A
Forvard volatge [Vgeth]: 4,5V ~ 6,5V
Case: DPAK
Manufacturer: STMicroelectronics
Manufacturer:: ST Manufacturer part number: STGD10NC60KDT4 RoHS Case style: DPAK t/r Datasheet
In stock:
20 pcs.
Quantity of pcs. 1+ 5+ 20+ 89+ 267+
Net price (EUR) 1,5503 1,1486 1,0030 0,9349 0,9114
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Packaging:
89
Manufacturer:: ST Manufacturer part number: STGD10NC60KDT4 Case style: DPAK  
External warehouse:
22500 pcs.
Quantity of pcs. 2500+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,9114
Add to comparison tool
Packaging:
2500
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: ST Manufacturer part number: STGD10NC60KDT4 Case style: DPAK  
External warehouse:
7500 pcs.
Quantity of pcs. 2500+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,9114
Add to comparison tool
Packaging:
2500
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Gate charge: 19nC
Max. dissipated power: 62W
Max. collector current: 20A
Max collector current (impulse): 30A
Forvard volatge [Vgeth]: 4,5V ~ 6,5V
Case: DPAK
Manufacturer: STMicroelectronics
Collector-emitter voltage: 600V
Operating temperature (range): -55°C ~ 150°C
Gate-emitter voltage: 20V
Mounting: SMD