STGD3NB60SDT4 STMicroelectronics

Symbol Micros: TSTGD3nb60sdt4

112953

TSTGD3nb60sdt4

Contractor Symbol:

Case : DPAK

Datasheet

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IGBT 600V 6A 48W

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Parameters

Gate charge:	23nC
Max. dissipated power:	48W
Max. collector current:	6A
Max collector current (impulse):	25A
Forvard volatge [Vgeth]:	2,5V ~ 4,5V
Case:	DPAK
Manufacturer:	STMicroelectronics

All parameters

Manufacturer:: ST Manufacturer part number: STGD3NB60SDT4 Case style: DPAK  

External warehouse:

2390 pcs.

Quantity of pcs.	10+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,6695

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Packaging:
10

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Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

Manufacturer:: ST Manufacturer part number: STGD3NB60SD RoHS Case style: DPAK t/r Datasheet

In stock:

50 pcs.

Quantity of pcs.	1+	3+	10+	50+	200+
Net price (EUR)	1,2731	0,9701	0,8033	0,7047	0,6695

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Packaging:
50 Quantity (multiple: 1)

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• Parameters

Gate charge:	23nC
Max. dissipated power:	48W
Max. collector current:	6A
Max collector current (impulse):	25A
Forvard volatge [Vgeth]:	2,5V ~ 4,5V
Case:	DPAK
Manufacturer:	STMicroelectronics
Collector-emitter voltage:	600V
Operating temperature (range):	-65°C ~ 175°C
Gate-emitter voltage:	20V
Mounting:	SMD

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