STGF10NB60SD STMicroelectronics

Symbol Micros: TSTGF10nb60sd
Contractor Symbol:
Case : TO220FP
IGBT 600V 23A 25W
Parameters
Gate charge: 33nC
Max. dissipated power: 25W
Max. collector current: 23A
Max collector current (impulse): 80A
Forvard volatge [Vgeth]: 2,5V ~ 5,0V
Case: TO220FP
Manufacturer: STMicroelectronics
Manufacturer:: ST Manufacturer part number: STGF10NB60SD Case style: TO220FP  
External warehouse:
500 pcs.
Quantity of pcs. 200+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,7699
Add to comparison tool
Packaging:
50
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: ST Manufacturer part number: STGF10NB60SD Case style: TO220FP  
External warehouse:
550 pcs.
Quantity of pcs. 200+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,7139
Add to comparison tool
Packaging:
50
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: ST Manufacturer part number: STGF10NB60SD Case style: TO220FP  
External warehouse:
33300 pcs.
Quantity of pcs. 200+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,7405
Add to comparison tool
Packaging:
50
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Gate charge: 33nC
Max. dissipated power: 25W
Max. collector current: 23A
Max collector current (impulse): 80A
Forvard volatge [Vgeth]: 2,5V ~ 5,0V
Case: TO220FP
Manufacturer: STMicroelectronics
Collector-emitter voltage: 600V
Operating temperature (range): -55°C ~ 150°C
Gate-emitter voltage: 20V
Mounting: THT