STGF10NB60SD STMicroelectronics
Symbol Micros:
TSTGF10nb60sd
Case : TO220FP
IGBT 600V 23A 25W
Parameters
Gate charge: | 33nC |
Max. dissipated power: | 25W |
Max. collector current: | 23A |
Max collector current (impulse): | 80A |
Forvard volatge [Vgeth]: | 2,5V ~ 5,0V |
Case: | TO220FP |
Manufacturer: | STMicroelectronics |
Manufacturer:: ST
Manufacturer part number: STGF10NB60SD
Case style: TO220FP
External warehouse:
500 pcs.
Quantity of pcs. | 200+ (Need a significantly larger quantity? Ask for price). |
---|---|
Net price (EUR) | 0,7699 |
Manufacturer:: ST
Manufacturer part number: STGF10NB60SD
Case style: TO220FP
External warehouse:
550 pcs.
Quantity of pcs. | 200+ (Need a significantly larger quantity? Ask for price). |
---|---|
Net price (EUR) | 0,7139 |
Manufacturer:: ST
Manufacturer part number: STGF10NB60SD
Case style: TO220FP
External warehouse:
33300 pcs.
Quantity of pcs. | 200+ (Need a significantly larger quantity? Ask for price). |
---|---|
Net price (EUR) | 0,7405 |
Gate charge: | 33nC |
Max. dissipated power: | 25W |
Max. collector current: | 23A |
Max collector current (impulse): | 80A |
Forvard volatge [Vgeth]: | 2,5V ~ 5,0V |
Case: | TO220FP |
Manufacturer: | STMicroelectronics |
Collector-emitter voltage: | 600V |
Operating temperature (range): | -55°C ~ 150°C |
Gate-emitter voltage: | 20V |
Mounting: | THT |
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