STGP10NC60KD

Symbol Micros: TSTGP10nc60kd
Contractor Symbol:
Case : TO220
Trans IGBT Chip N-CH 600V 20A 60000mW 3-Pin(3+Tab) TO-220
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Parameters
Gate charge: 19nC
Max. dissipated power: 65W
Max. collector current: 20A
Max collector current (impulse): 30A
Forvard volatge [Vgeth]: 4,5V ~ 6,5V
Case: TO220
Manufacturer: STMicroelectronics
Manufacturer:: ST Manufacturer part number: STGP10NC60KD RoHS Case style: TO220 Datasheet
In stock:
140 pcs.
Quantity of pcs. 1+ 5+ 50+ 100+ 400+
Net price (EUR) 1,5338 1,0735 0,8606 0,8352 0,8074
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Packaging:
50
Gate charge: 19nC
Max. dissipated power: 65W
Max. collector current: 20A
Max collector current (impulse): 30A
Forvard volatge [Vgeth]: 4,5V ~ 6,5V
Case: TO220
Manufacturer: STMicroelectronics
Collector-emitter voltage: 600V
Operating temperature (range): -55°C ~ 150°C
Gate-emitter voltage: 20V
Mounting: THT