STGP14NC60KD

Symbol Micros: TSTGP14nc60kd
Contractor Symbol:
Case : TO220
Trans IGBT Chip N-CH 600V 25A 80000mW 3-Pin(3+Tab) TO-220
Parameters
Gate charge: 34,4nC
Max. dissipated power: 80W
Max. collector current: 25A
Max collector current (impulse): 50A
Forvard volatge [Vgeth]: 4,5V ~ 6,5V
Case: TO220
Manufacturer: STMicroelectronics
Manufacturer:: ST Manufacturer part number: STGP14NC60KD RoHS Case style: TO220 Datasheet
In stock:
110 pcs.
Quantity of pcs. 1+ 5+ 50+ 150+ 300+
Net price (EUR) 1,7377 1,2892 1,0708 1,0356 1,0215
Add to comparison tool
Packaging:
50/150
Gate charge: 34,4nC
Max. dissipated power: 80W
Max. collector current: 25A
Max collector current (impulse): 50A
Forvard volatge [Vgeth]: 4,5V ~ 6,5V
Case: TO220
Manufacturer: STMicroelectronics
Collector-emitter voltage: 600V
Operating temperature (range): -55°C ~ 150°C
Gate-emitter voltage: 20V
Mounting: THT