STGW35HF60WDI STMicroelectronics

Symbol Micros: TSTGW35HF60WDI

181113

TSTGW35HF60WDI

Contractor Symbol:

Case : TO247

Datasheet

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Trans IGBT Chip N-CH 600V 60A 200000mW 3-Pin(3+Tab) TO-247 Tube

Parameters

Gate charge:	140nC
Max. dissipated power:	200W
Max. collector current:	60A
Max collector current (impulse):	150A
Forvard volatge [Vgeth]:	3,75V ~ 5,75V
Case:	TO247
Manufacturer:	STMicroelectronics

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• Parameters

Gate charge:	140nC
Max. dissipated power:	200W
Max. collector current:	60A
Max collector current (impulse):	150A
Forvard volatge [Vgeth]:	3,75V ~ 5,75V
Case:	TO247
Manufacturer:	STMicroelectronics
Collector-emitter voltage:	600V
Operating temperature (range):	-55°C ~ 150°C
Gate-emitter voltage:	20V
Mounting:	THT

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