STGW35NB60SD

Symbol Micros: TSTGW35nb60sd
Contractor Symbol:
Case : TO247
70A; 600V; 200W; IGBT
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Parameters
Gate charge: 115nC
Max. dissipated power: 200W
Max. collector current: 70A
Max collector current (impulse): 250A
Forvard volatge [Vgeth]: 2,5V ~ 5,0V
Case: TO247
Manufacturer: STMicroelectronics
         
 
Item available on request
Gate charge: 115nC
Max. dissipated power: 200W
Max. collector current: 70A
Max collector current (impulse): 250A
Forvard volatge [Vgeth]: 2,5V ~ 5,0V
Case: TO247
Manufacturer: STMicroelectronics
Collector-emitter voltage: 600V
Operating temperature (range): -55°C ~ 150°C
Gate-emitter voltage: 20V
Mounting: THT