STGW39NC60VD STMicroelectronics

Symbol Micros: TSTGW39nc60vd
Contractor Symbol:
Case : TO247
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80A; 600V; 250W; IGBT
Parameters
Gate charge: 126nC
Max. dissipated power: 250W
Max. collector current: 80A
Max collector current (impulse): 220A
Forvard volatge [Vgeth]: 3,75V ~ 5,75V
Case: TO247
Manufacturer: STMicroelectronics
Manufacturer:: ST Manufacturer part number: STGW39NC60VD RoHS Case style: TO247 Datasheet
In stock:
68 pcs.
Quantity of pcs. 1+ 3+ 10+ 30+ 90+
Net price (EUR) 3,7618 3,1630 2,8037 2,6253 2,5243
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Packaging:
30/330
Gate charge: 126nC
Max. dissipated power: 250W
Max. collector current: 80A
Max collector current (impulse): 220A
Forvard volatge [Vgeth]: 3,75V ~ 5,75V
Case: TO247
Manufacturer: STMicroelectronics
Collector-emitter voltage: 600V
Operating temperature (range): -55°C ~ 150°C
Gate-emitter voltage: 20V
Mounting: SMD

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