STN1HNK60

Symbol Micros: TSTN1HNK60
Contractor Symbol:
Case : SOT223
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Trans MOSFET N-CH 600V 0.4A
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Parameters
Open channel resistance: 8,5Ohm
Max. drain current: 400mA
Max. power loss: 3,3W
Case: SOT223
Manufacturer: STMicroelectronics
Max. drain-source voltage: 600V
Max. drain-gate voltage: 600V
Manufacturer:: ST Manufacturer part number: STN1HNK60 RoHS Case style: SOT223t/r Datasheet
In stock:
250 pcs.
Quantity of pcs. 2+ 10+ 50+ 300+ 1200+
Net price (EUR) 0,5047 0,3061 0,2360 0,2087 0,2014
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Packaging:
300
Open channel resistance: 8,5Ohm
Max. drain current: 400mA
Max. power loss: 3,3W
Case: SOT223
Manufacturer: STMicroelectronics
Max. drain-source voltage: 600V
Max. drain-gate voltage: 600V
Transistor type: N-MOSFET
Max. gate-source Voltage: 30V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD

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