STN1HNK60

Symbol Micros: TSTN1HNK60
Contractor Symbol:
Case : SOT223
Trans MOSFET N-CH 600V 0.4A
Parameters
Open channel resistance: 8,5Ohm
Max. drain current: 400mA
Max. power loss: 3,3W
Case: SOT223
Manufacturer: STMicroelectronics
Max. drain-source voltage: 600V
Max. drain-gate voltage: 600V
Manufacturer:: ST Manufacturer part number: STN1HNK60 RoHS Case style: SOT223t/r Datasheet
In stock:
250 pcs.
Quantity of pcs. 2+ 10+ 50+ 300+ 1200+
Net price (EUR) 0,5049 0,3063 0,2355 0,2089 0,2017
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Packaging:
300
Manufacturer:: ST Manufacturer part number: STN1HNK60 Case style: SOT223  
External warehouse:
84000 pcs.
Quantity of pcs. 4000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,2017
Add to comparison tool
Packaging:
4000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: ST Manufacturer part number: STN1HNK60 Case style: SOT223  
External warehouse:
124000 pcs.
Quantity of pcs. 4000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,2017
Add to comparison tool
Packaging:
4000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Open channel resistance: 8,5Ohm
Max. drain current: 400mA
Max. power loss: 3,3W
Case: SOT223
Manufacturer: STMicroelectronics
Max. drain-source voltage: 600V
Max. drain-gate voltage: 600V
Transistor type: N-MOSFET
Max. gate-source Voltage: 30V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD