STP10NK60ZFP
| Open channel resistance: | 750mOhm |
| Max. drain current: | 10A |
| Max. power loss: | 35W |
| Case: | TO220iso |
| Manufacturer: | STMicroelectronics |
| Max. drain-source voltage: | 600V |
| Transistor type: | N-MOSFET |
| Open channel resistance: | 750mOhm |
| Max. drain current: | 10A |
| Max. power loss: | 35W |
| Case: | TO220iso |
| Manufacturer: | STMicroelectronics |
| Max. drain-source voltage: | 600V |
| Transistor type: | N-MOSFET |
| Max. gate-source Voltage: | 30V |
| Operating temperature (range): | -55°C ~ 150°C |
| Mounting: | THT |
STP10NK60ZFP is a power MOSFET with an N-channel, designed for operation in high-voltage and heavy-load circuits. It features a maximum drain-source voltage of 600V and a maximum drain current of 10A. These parameters make it ideal for applications in switching power supplies, energy converters, and motor control systems.
The STP10NK60ZFP transistor utilizes SuperMESH™ technology, which ensures low on-state resistance (below 750mOhm), enhancing energy efficiency and reducing power losses. With built-in Zener-protected gate protection, the transistor is safeguarded against voltage spikes, and its high avalanche energy capacity and strong resistance to rapid voltage changes (dv/dt) make it a reliable solution even for the most demanding applications.
The STP10NK60ZFP operates within a wide temperature range from -55°C to +150°C, allowing its use in challenging industrial environments. The TO220iso package with thermal insulation ensures efficient heat dissipation and secure electrical insulation, simplifying assembly and improving safety.