STP11NM60ND

Symbol Micros: TSTP11NM60ND

98454

TSTP11NM60ND

Contractor Symbol:

Case : TO220

Datasheet

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N-MOSFET 600V 10A 450mOhm@5A,10V, 30nC@10V, 850pF@50V, 90W

Parameters

Open channel resistance:	450mOhm
Max. drain current:	10A
Max. power loss:	90W
Case:	TO220
Manufacturer:	STMicroelectronics
Max. drain-source voltage:	650V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: ST Manufacturer part number: STP11NM60ND Case style: TO220  

External warehouse:

950 pcs.

Quantity of pcs.	150+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,9497

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Packaging:
50

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

Manufacturer:: ST Manufacturer part number: STP11NM60ND Case style: TO220  

External warehouse:

2155 pcs.

Quantity of pcs.	150+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	1,0880

Add to comparison tool Add inquiry (RFQ)

Packaging:
50

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	450mOhm
Max. drain current:	10A
Max. power loss:	90W
Case:	TO220
Manufacturer:	STMicroelectronics
Max. drain-source voltage:	650V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	25V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	THT

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