STP12NK80Z

Symbol Micros: TSTP12NK80Z
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Case : TO220
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N-MOSFET 10.5A 800V 190W
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Parameters
Open channel resistance: 750mOhm
Max. drain current: 10,5A
Max. power loss: 190W
Case: TO220
Manufacturer: STMicroelectronics
Max. drain-source voltage: 800V
Max. drain-gate voltage: 800V
         
 
Item available on request
Open channel resistance: 750mOhm
Max. drain current: 10,5A
Max. power loss: 190W
Case: TO220
Manufacturer: STMicroelectronics
Max. drain-source voltage: 800V
Max. drain-gate voltage: 800V
Transistor type: N-MOSFET
Max. gate-source Voltage: 30V
Operating temperature (range): -55°C ~ 150°C
Mounting: THT

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