STP13NM60N

Symbol Micros: TSTP13NM60N
Contractor Symbol:
Case : TO220
Transistor N-Channel MOSFET; 600V; 25V; 360mOhm; 11A; 90W; -55°C ~ 150°C;
Parameters
Open channel resistance: 360mOhm
Max. drain current: 11A
Max. power loss: 90W
Case: TO220
Manufacturer: STMicroelectronics
Max. drain-source voltage: 600V
Transistor type: N-MOSFET
Manufacturer:: ST Manufacturer part number: STP13NM60N RoHS Case style: TO220 Datasheet
In stock:
25 pcs.
Quantity of pcs. 1+ 3+ 10+ 50+ 200+
Net price (EUR) 1,7891 1,4280 1,2217 1,0974 1,0529
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Packaging:
50
Manufacturer:: ST Manufacturer part number: STP13NM60N Case style: TO220  
External warehouse:
1350 pcs.
Quantity of pcs. 150+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 1,0529
Add to comparison tool
Packaging:
50
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: ST Manufacturer part number: STP13NM60N Case style: TO220  
External warehouse:
2500 pcs.
Quantity of pcs. 200+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 1,0529
Add to comparison tool
Packaging:
50
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Open channel resistance: 360mOhm
Max. drain current: 11A
Max. power loss: 90W
Case: TO220
Manufacturer: STMicroelectronics
Max. drain-source voltage: 600V
Transistor type: N-MOSFET
Max. gate-source Voltage: 25V
Operating temperature (range): -55°C ~ 150°C
Mounting: THT