STP18NM80

Symbol Micros: TSTP18NM80
Contractor Symbol:
Case : TO220
Transistor N-Channel MOSFET; 800V; 30V; 295mOhm; 17A; 190W; -65°C~150°C;
Parameters
Open channel resistance: 295mOhm
Max. drain current: 17A
Max. power loss: 190W
Case: TO220
Manufacturer: STMicroelectronics
Max. drain-source voltage: 800V
Transistor type: N-MOSFET
Manufacturer:: ST Manufacturer part number: STP18NM80 RoHS Case style: TO220 Datasheet
In stock:
50 pcs.
Quantity of pcs. 1+ 3+ 10+ 50+ 200+
Net price (EUR) 3,3462 2,9874 2,7693 2,6286 2,5747
Add to comparison tool
Packaging:
50
Manufacturer:: ST Manufacturer part number: STP18NM80 Case style: TO220  
External warehouse:
1524 pcs.
Quantity of pcs. 100+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 2,5747
Add to comparison tool
Packaging:
50
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: ST Manufacturer part number: STP18NM80 Case style: TO220  
External warehouse:
42150 pcs.
Quantity of pcs. 100+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 2,5747
Add to comparison tool
Packaging:
50
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Open channel resistance: 295mOhm
Max. drain current: 17A
Max. power loss: 190W
Case: TO220
Manufacturer: STMicroelectronics
Max. drain-source voltage: 800V
Transistor type: N-MOSFET
Max. gate-source Voltage: 30V
Operating temperature (range): -65°C ~ 150°C
Mounting: THT