STP5NB60

Symbol Micros: TSTP5NB60

13458

TSTP5NB60

Contractor Symbol:

Case : TO220

Datasheet

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N-MOSFET 5A 600V 100W 1.8Ω

Parameters

Open channel resistance:	2Ohm
Max. drain current:	5A
Max. power loss:	100W
Case:	TO220
Manufacturer:	STMicroelectronics
Max. drain-source voltage:	600V
Max. drain-gate voltage:	600V

All parameters

Manufacturer:: ST Manufacturer part number: STP5NB60 Case style: TO220 Datasheet

In stock:

299 pcs.

Quantity of pcs.	2+	10+	50+	200+	500+
Net price (EUR)	0,7740	0,4864	0,3835	0,3484	0,3367

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50/500 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	2Ohm
Max. drain current:	5A
Max. power loss:	100W
Case:	TO220
Manufacturer:	STMicroelectronics
Max. drain-source voltage:	600V
Max. drain-gate voltage:	600V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	30V
Operating temperature (range):	-65°C ~ 150°C
Mounting:	THT

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