STP5NK80Z

Symbol Micros: TSTP5NK80Z
Contractor Symbol:
Case : TO220
N-MOSEFT 4,3A 800V 30W
Parameters
Open channel resistance: 2,4Ohm
Max. drain current: 4,3A
Max. power loss: 110W
Case: TO220
Manufacturer: STMicroelectronics
Max. drain-source voltage: 800V
Transistor type: N-MOSFET
Manufacturer:: ST Manufacturer part number: STP5NK80Z RoHS Case style: TO220 Datasheet
In stock:
60 pcs.
Quantity of pcs. 1+ 5+ 50+ 200+ 400+
Net price (EUR) 1,3196 0,9256 0,7390 0,7041 0,6948
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Packaging:
50/200
Manufacturer:: ST Manufacturer part number: STP5NK80Z Case style: TO220  
External warehouse:
6857 pcs.
Quantity of pcs. 250+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,6948
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Packaging:
50
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: ST Manufacturer part number: STP5NK80Z Case style: TO220  
External warehouse:
6903 pcs.
Quantity of pcs. 250+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,6948
Add to comparison tool
Packaging:
50
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Open channel resistance: 2,4Ohm
Max. drain current: 4,3A
Max. power loss: 110W
Case: TO220
Manufacturer: STMicroelectronics
Max. drain-source voltage: 800V
Transistor type: N-MOSFET
Max. gate-source Voltage: 30V
Operating temperature (range): -55°C ~ 150°C
Mounting: THT