STP6NK60Z

Symbol Micros: TSTP6NK60Z
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Case : TO220
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N-MOSFET 6A 600V 125W 1Ω Replacement: STP6NC60
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Parameters
Open channel resistance: 1,2Ohm
Max. drain current: 6A
Max. power loss: 110W
Case: TO220
Manufacturer: STMicroelectronics
Max. drain-source voltage: 600V
Transistor type: N-MOSFET
Manufacturer:: ST Manufacturer part number: STP6NK60Z RoHS Case style: TO220 Datasheet
In stock:
160 pcs.
Quantity of pcs. 1+ 5+ 50+ 300+ 600+
Net price (EUR) 1,1473 0,7641 0,5912 0,5538 0,5468
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Packaging:
50/300
Open channel resistance: 1,2Ohm
Max. drain current: 6A
Max. power loss: 110W
Case: TO220
Manufacturer: STMicroelectronics
Max. drain-source voltage: 600V
Transistor type: N-MOSFET
Max. gate-source Voltage: 30V
Operating temperature (range): -55°C ~ 150°C
Mounting: THT

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