STW20NM60FD STM

Symbol Micros: TSTW20NM60fd
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Case : TO247
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N-MOSFET 600V 20A
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Parameters
Open channel resistance: 290mOhm
Max. drain current: 20A
Max. power loss: 214W
Case: TO247
Manufacturer: STMicroelectronics
Max. drain-source voltage: 600V
Max. drain-gate voltage: 600V
         
 
Item available on request
         
 
Item in delivery
Estimated date:
2024-08-31
Quantity of pcs.: 60
Open channel resistance: 290mOhm
Max. drain current: 20A
Max. power loss: 214W
Case: TO247
Manufacturer: STMicroelectronics
Max. drain-source voltage: 600V
Max. drain-gate voltage: 600V
Transistor type: N-MOSFET
Max. gate-source Voltage: 30V
Operating temperature (range): -65°C ~ 150°C
Mounting: THT

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