SUD50N06-09L-E3 Vishay

Symbol Micros: TSUD50N06-09L

102700

TSUD50N06-09L

Contractor Symbol:

Case : TO252

Datasheet

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N-MOSFET 60V 50A 9.3mΩ 136W

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Parameters

Open channel resistance:	20mOhm
Max. drain current:	50A
Max. power loss:	136W
Case:	TO252
Manufacturer:	VISHAY
Max. drain-source voltage:	60V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Siliconix Manufacturer part number: SUD50N06-09L-E3 RoHS Case style: TO252t/r  

In stock:

45 pcs.

Quantity of pcs.	1+	3+	10+	30+	100+
Net price (EUR)	1,7713	1,4028	1,1936	1,0961	1,0414

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Packaging:
2100 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	20mOhm
Max. drain current:	50A
Max. power loss:	136W
Case:	TO252
Manufacturer:	VISHAY
Max. drain-source voltage:	60V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	SMD

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