TK1K9A60F,S4X(S

Symbol Micros: TTK1k9a60f
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Case : TO220iso
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N-Channel 600V 3.7A (Ta) 30W (Tc) Through Hole TO-220SIS TK1K9A60F,S4X(S
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Parameters
Open channel resistance: 1,9Ohm
Max. drain current: 3,7A
Max. power loss: 30W
Case: TO220iso
Manufacturer: Toshiba
Max. drain-source voltage: 600V
Transistor type: N-MOSFET
Manufacturer:: Toshiba Manufacturer part number: TK1K9A60F,S4X RoHS Case style: TO220iso Datasheet
In stock:
10 pcs.
Quantity of pcs. 1+ 3+ 10+ 50+ 200+
Net price (EUR) 1,5725 1,1987 0,9931 0,8692 0,8272
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Packaging:
10
Open channel resistance: 1,9Ohm
Max. drain current: 3,7A
Max. power loss: 30W
Case: TO220iso
Manufacturer: Toshiba
Max. drain-source voltage: 600V
Transistor type: N-MOSFET
Max. gate-source Voltage: 30V
Operating temperature (range): -55°C ~ 150°C
Mounting: THT

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