TPH3R203NL,L1Q TOSHIBA

Symbol Micros: TTPH3r203nl
Contractor Symbol:
Case : VDFN08
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MOSFETs Silicon N-channel MOS (U-MOS 4-H) 30V 47A
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Parameters
Open channel resistance: 4,7mOhm
Max. drain current: 47A
Max. power loss: 44W
Case: VDFN08
Manufacturer: Toshiba
Max. drain-source voltage: 30V
Transistor type: N-MOSFET
Manufacturer:: Toshiba Manufacturer part number: TPH3R203NL,L1Q RoHS Case style: VDFN08 Datasheet
In stock:
100 pcs.
Quantity of pcs. 2+ 10+ 30+ 100+ 400+
Net price (EUR) 0,8015 0,5024 0,4183 0,3715 0,3482
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Packaging:
100
Open channel resistance: 4,7mOhm
Max. drain current: 47A
Max. power loss: 44W
Case: VDFN08
Manufacturer: Toshiba
Max. drain-source voltage: 30V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD

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