TPH4R606NH,L1Q Toshiba

Symbol Micros: TTPH4r606nh
Contractor Symbol:
Case : SOP08
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N-MOSFET 60V 32A 1.6W 4.6mΩ
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Parameters
Open channel resistance: 11mOhm
Max. drain current: 32A
Max. power loss: 63W
Case: SOP08
Manufacturer: Toshiba
Max. drain-source voltage: 60V
Transistor type: N-MOSFET
Manufacturer:: Toshiba Manufacturer part number: TPH4R606NH,L1Q RoHS Case style: SOP08t/r Datasheet
In stock:
107 pcs.
Quantity of pcs. 1+ 5+ 30+ 150+ 300+
Net price (EUR) 1,0889 0,7220 0,5748 0,5281 0,5187
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Packaging:
150
Open channel resistance: 11mOhm
Max. drain current: 32A
Max. power loss: 63W
Case: SOP08
Manufacturer: Toshiba
Max. drain-source voltage: 60V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD

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