TSM120N06LCR

Symbol Micros: TTSM120n06lcr
Contractor Symbol:
Case : PDFN56
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Transistor N-Channel MOSFET; 60V; 20V; 15mOhm; 54A; 69W; -55°C ~ 150°C; TSM120N06LCR RLG
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Parameters
Open channel resistance: 15mOhm
Max. drain current: 54A
Max. power loss: 69W
Case: PDFN56
Manufacturer: TAI-SEM
Max. drain-source voltage: 60V
Transistor type: N-MOSFET
Manufacturer:: Taiwan Semiconductor Co., Ltd. Manufacturer part number: TSM120N06LCR RLG RoHS Case style: PDFN56 Datasheet
In stock:
50 pcs.
Quantity of pcs. 2+ 10+ 50+ 200+ 1000+
Net price (EUR) 0,6192 0,3926 0,3084 0,2804 0,2687
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Packaging:
50
Open channel resistance: 15mOhm
Max. drain current: 54A
Max. power loss: 69W
Case: PDFN56
Manufacturer: TAI-SEM
Max. drain-source voltage: 60V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD

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