TSM1N60CP

Symbol Micros: TTSM1n60cp

54677

TTSM1n60cp

Contractor Symbol:

Case : TO252 (DPACK)

Datasheet

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N-MOSFET 1A 600V 50W RDS=8 TSM1N60LCP

Parameters

Open channel resistance:	8Ohm
Max. drain current:	1A
Max. power loss:	50W
Case:	TO252 (DPACK)
Manufacturer:	TAI-SEM
Max. drain-source voltage:	600V
Transistor type:	N-MOSFET

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• Parameters

Open channel resistance:	8Ohm
Max. drain current:	1A
Max. power loss:	50W
Case:	TO252 (DPACK)
Manufacturer:	TAI-SEM
Max. drain-source voltage:	600V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	30V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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