TSM1NB60CP ROG

Symbol Micros: TTSM1nb60cp

123964

TTSM1nb60cp

Contractor Symbol:

Case : DPAK

Datasheet

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Trans MOSFET N-CH 600V 1A 3-Pin(2+Tab) DPAK

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Parameters

Open channel resistance:	10Ohm
Max. drain current:	1A
Max. power loss:	39W
Case:	DPAK
Manufacturer:	TAI-SEM
Max. drain-source voltage:	600V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Taiwan Semiconductor Co., Ltd. Manufacturer part number: TSM1NB60CP RoHS Case style: DPAK t/r Datasheet

In stock:

100 pcs.

Quantity of pcs.	3+	20+	100+	300+	1000+
Net price (EUR)	0,4476	0,2461	0,1938	0,1793	0,1720

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Packaging:
100 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	10Ohm
Max. drain current:	1A
Max. power loss:	39W
Case:	DPAK
Manufacturer:	TAI-SEM
Max. drain-source voltage:	600V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	30V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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