TSM1NB60CP ROG

Symbol Micros: TTSM1nb60cp
Contractor Symbol:
Case : DPAK
Trans MOSFET N-CH 600V 1A 3-Pin(2+Tab) DPAK
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Parameters
Open channel resistance: 10Ohm
Max. drain current: 1A
Max. power loss: 39W
Case: DPAK
Manufacturer: TAI-SEM
Max. drain-source voltage: 600V
Transistor type: N-MOSFET
Manufacturer:: Taiwan Semiconductor Co., Ltd. Manufacturer part number: TSM1NB60CP RoHS Case style: DPAK t/r Datasheet
In stock:
100 pcs.
Quantity of pcs. 3+ 20+ 100+ 300+ 1000+
Net price (EUR) 0,4463 0,2453 0,1932 0,1788 0,1715
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Packaging:
100
Open channel resistance: 10Ohm
Max. drain current: 1A
Max. power loss: 39W
Case: DPAK
Manufacturer: TAI-SEM
Max. drain-source voltage: 600V
Transistor type: N-MOSFET
Max. gate-source Voltage: 30V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD