TSM2308CX

Symbol Micros: TTSM2308cx
Contractor Symbol:
Case : SOT23
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Transistor N-Channel MOSFET; 60V; 20V; 192mOhm; 3A; 1,25W; -55°C ~ 150°C; TSM2308CX RFG
Parameters
Open channel resistance: 192mOhm
Max. drain current: 3A
Max. power loss: 1,25W
Case: SOT23
Manufacturer: TAI-SEM
Max. drain-source voltage: 60V
Transistor type: N-MOSFET
Manufacturer:: Taiwan Semiconductor Co., Ltd. Manufacturer part number: TSM2308CX RFG RoHS Case style: SOT23t/r Datasheet
In stock:
100 pcs.
Quantity of pcs. 2+ 10+ 30+ 100+ 400+
Net price (EUR) 0,7185 0,4509 0,3734 0,3334 0,3123
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Packaging:
100
Open channel resistance: 192mOhm
Max. drain current: 3A
Max. power loss: 1,25W
Case: SOT23
Manufacturer: TAI-SEM
Max. drain-source voltage: 60V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD

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