TSM2309CX
Symbol Micros:
TTSM2309cx
Case : SOT23
Transistor P-Channel MOSFET; 60V; 20V; 240mOhm; 3,1A; 1,56W; -50°C ~ 150°C; TSM2309CX RFG
Parameters
Open channel resistance: | 240mOhm |
Max. drain current: | 3,1A |
Max. power loss: | 1,56W |
Case: | SOT23 |
Manufacturer: | TAI-SEM |
Max. drain-source voltage: | 60V |
Transistor type: | P-MOSFET |
Manufacturer:: Taiwan Semiconductor Co., Ltd.
Manufacturer part number: TSM2309CX RFG RoHS
Case style: SOT23t/r
Datasheet
In stock:
94 pcs.
Quantity of pcs. | 3+ | 10+ | 50+ | 200+ | 1000+ |
---|---|---|---|---|---|
Net price (EUR) | 0,2664 | 0,1699 | 0,1192 | 0,1035 | 0,0968 |
Manufacturer:: Taiwan Semiconductor Co., Ltd.
Manufacturer part number: TSM2309CX RFG
Case style: SOT23
External warehouse:
39000 pcs.
Quantity of pcs. | 3000+ (Need a significantly larger quantity? Ask for price). |
---|---|
Net price (EUR) | 0,0968 |
Manufacturer:: Taiwan Semiconductor Co., Ltd.
Manufacturer part number: TSM2309CX RFG
Case style: SOT23
External warehouse:
18300 pcs.
Quantity of pcs. | 100+ (Need a significantly larger quantity? Ask for price). |
---|---|
Net price (EUR) | 0,0968 |
Open channel resistance: | 240mOhm |
Max. drain current: | 3,1A |
Max. power loss: | 1,56W |
Case: | SOT23 |
Manufacturer: | TAI-SEM |
Max. drain-source voltage: | 60V |
Transistor type: | P-MOSFET |
Max. gate-source Voltage: | 20V |
Operating temperature (range): | -50°C ~ 150°C |
Mounting: | SMD |
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