TSM2N60SCW RPG

Symbol Micros: TTSM2n60scw
Contractor Symbol:
Case : SOT223
Trans MOSFET N-CH 600V 0.6A T/R
Parameters
Open channel resistance: 5Ohm
Max. drain current: 600mA
Max. power loss: 2,5W
Case: SOT223
Manufacturer: TAI-SEM
Max. drain-source voltage: 600V
Transistor type: N-MOSFET
Manufacturer:: Taiwan Semiconductor Co., Ltd. Manufacturer part number: TSM2N60SCW RPG RoHS Case style: SOT223t/r Datasheet
In stock:
25 pcs.
Quantity of pcs. 2+ 10+ 25+ 100+ 400+
Net price (EUR) 0,5539 0,3319 0,2781 0,2384 0,2213
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Packaging:
25
Manufacturer:: Taiwan Semiconductor Co., Ltd. Manufacturer part number: TSM2N60SCW RPG Case style: SOT223  
External warehouse:
350 pcs.
Quantity of pcs. 25+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,2922
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Packaging:
25
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Open channel resistance: 5Ohm
Max. drain current: 600mA
Max. power loss: 2,5W
Case: SOT223
Manufacturer: TAI-SEM
Max. drain-source voltage: 600V
Transistor type: N-MOSFET
Max. gate-source Voltage: 30V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD