TSM2NB60CP ROG

Symbol Micros: TTSM2nb60cp
Contractor Symbol:
Case : DPAK
Trans MOSFET N-CH 600V 2A 3-Pin(2+Tab) DPAK T/R
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Parameters
Open channel resistance: 4,4Ohm
Max. drain current: 2A
Max. power loss: 44W
Case: DPAK
Manufacturer: TAI-SEM
Max. drain-source voltage: 600V
Transistor type: N-MOSFET
Manufacturer:: Taiwan Semiconductor Co., Ltd. Manufacturer part number: TSM2NB60CP ROG RoHS Case style: DPAK t/r Datasheet
In stock:
25 pcs.
Quantity of pcs. 2+ 10+ 25+ 100+ 400+
Net price (EUR) 0,5912 0,3715 0,3154 0,2734 0,2570
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Packaging:
25
Open channel resistance: 4,4Ohm
Max. drain current: 2A
Max. power loss: 44W
Case: DPAK
Manufacturer: TAI-SEM
Max. drain-source voltage: 600V
Transistor type: N-MOSFET
Max. gate-source Voltage: 30V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD