TSM650P03CX

Symbol Micros: TTSM650p03cx
Contractor Symbol:
Case : SOT23
Transistor P-Channel MOSFET; 30V; 12V; 100mOhm; 4,1A; 1,56W; -55°C ~ 150°C; TSM650P03CX RFG
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Parameters
Open channel resistance: 100mOhm
Max. drain current: 4,1A
Max. power loss: 1,56W
Case: SOT23
Manufacturer: TAI-SEM
Max. drain-source voltage: 30V
Transistor type: P-MOSFET
Manufacturer:: Taiwan Semiconductor Co., Ltd. Manufacturer part number: TSM650P03CX RoHS Case style: SOT23t/r Datasheet
In stock:
200 pcs.
Quantity of pcs. 5+ 20+ 100+ 200+ 1000+
Net price (EUR) 0,2781 0,1526 0,1000 0,0902 0,0797
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Packaging:
200
Open channel resistance: 100mOhm
Max. drain current: 4,1A
Max. power loss: 1,56W
Case: SOT23
Manufacturer: TAI-SEM
Max. drain-source voltage: 30V
Transistor type: P-MOSFET
Max. gate-source Voltage: 12V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD