TSM850N06CX
Symbol Micros:
TTSM850n06cx
Case : SOT23
Transistor N-Channel MOSFET; 60V; 20V; 100mOhm; 3A; 1,7W; -55°C ~ 150°C; TSM850N06CX RFG
Parameters
| Open channel resistance: | 100mOhm |
| Max. drain current: | 3A |
| Max. power loss: | 1,7W |
| Case: | SOT23 |
| Manufacturer: | TAI-SEM |
| Max. drain-source voltage: | 60V |
| Transistor type: | N-MOSFET |
Manufacturer:: Taiwan Semiconductor Co., Ltd.
Manufacturer part number: TSM850N06CX RPG RoHS
Case style: SOT23
Datasheet
In stock:
40 pcs.
| Quantity of pcs. | 3+ | 20+ | 100+ | 300+ | 1000+ |
|---|---|---|---|---|---|
| Net price (EUR) | 0,2547 | 0,1351 | 0,1047 | 0,0965 | 0,0925 |
Manufacturer:: Taiwan Semiconductor Co., Ltd.
Manufacturer part number: TSM850N06CX RFG
Case style: SOT23
External warehouse:
2800 pcs.
| Quantity of pcs. | 100+ (Need a significantly larger quantity? Ask for price). |
|---|---|
| Net price (EUR) | 0,1118 |
Manufacturer:: Taiwan Semiconductor Co., Ltd.
Manufacturer part number: TSM850N06CX RFG
Case style: SOT23
External warehouse:
45000 pcs.
| Quantity of pcs. | 3000+ (Need a significantly larger quantity? Ask for price). |
|---|---|
| Net price (EUR) | 0,0925 |
| Open channel resistance: | 100mOhm |
| Max. drain current: | 3A |
| Max. power loss: | 1,7W |
| Case: | SOT23 |
| Manufacturer: | TAI-SEM |
| Max. drain-source voltage: | 60V |
| Transistor type: | N-MOSFET |
| Max. gate-source Voltage: | 20V |
| Operating temperature (range): | -55°C ~ 150°C |
| Mounting: | SMD |
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