TSM850N06CX

Symbol Micros: TTSM850n06cx
Contractor Symbol:
Case : SOT23
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Transistor N-Channel MOSFET; 60V; 20V; 100mOhm; 3A; 1,7W; -55°C ~ 150°C; TSM850N06CX RFG
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Parameters
Open channel resistance: 100mOhm
Max. drain current: 3A
Max. power loss: 1,7W
Case: SOT23
Manufacturer: TAI-SEM
Max. drain-source voltage: 60V
Transistor type: N-MOSFET
Manufacturer:: Taiwan Semiconductor Co., Ltd. Manufacturer part number: TSM850N06CX RPG RoHS Case style: SOT23 Datasheet
In stock:
40 pcs.
Quantity of pcs. 3+ 20+ 100+ 300+ 1000+
Net price (EUR) 0,2547 0,1351 0,1047 0,0965 0,0925
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Packaging:
100
Open channel resistance: 100mOhm
Max. drain current: 3A
Max. power loss: 1,7W
Case: SOT23
Manufacturer: TAI-SEM
Max. drain-source voltage: 60V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD

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