VND10N06

Symbol Micros: TVND10n06
Contractor Symbol:
Case : TO252
N-MOSFET 10A 60V 35W 0.3Ω
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Parameters
Open channel resistance: 300mOhm
Max. drain current: 10A
Max. power loss: 35W
Case: TO252
Manufacturer: STMicroelectronics
Max. drain-source voltage: 60V
Transistor type: OMNI-FET
Manufacturer:: ST Manufacturer part number: VND10N06 RoHS Case style: TO252t/r Datasheet
In stock:
40 pcs.
Quantity of pcs. 1+ 3+ 10+ 50+ 200+
Net price (EUR) 1,3895 1,0618 0,8789 0,7696 0,7316
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Packaging:
50
Manufacturer:: ST Manufacturer part number: VND10N06TR-E Case style: TO252  
External warehouse:
185000 pcs.
Quantity of pcs. 2500+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,7316
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Packaging:
2500
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: ST Manufacturer part number: VND10N06TR-E Case style: TO252  
External warehouse:
7500 pcs.
Quantity of pcs. 2500+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,7471
Add to comparison tool
Packaging:
2500
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Open channel resistance: 300mOhm
Max. drain current: 10A
Max. power loss: 35W
Case: TO252
Manufacturer: STMicroelectronics
Max. drain-source voltage: 60V
Transistor type: OMNI-FET
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD