VND10N06

Symbol Micros: TVND10n06
Contractor Symbol:
Case : TO252
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N-MOSFET 10A 60V 35W 0.3Ω
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Parameters
Open channel resistance: 300mOhm
Max. drain current: 10A
Max. power loss: 35W
Case: TO252
Manufacturer: STMicroelectronics
Max. drain-source voltage: 60V
Transistor type: OMNI-FET
Manufacturer:: ST Manufacturer part number: VND10N06 RoHS Case style: TO252t/r Datasheet
In stock:
40 pcs.
Quantity of pcs. 1+ 3+ 10+ 50+ 200+
Net price (EUR) 1,3669 1,0445 0,8645 0,7571 0,7197
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Packaging:
50
Open channel resistance: 300mOhm
Max. drain current: 10A
Max. power loss: 35W
Case: TO252
Manufacturer: STMicroelectronics
Max. drain-source voltage: 60V
Transistor type: OMNI-FET
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD

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