VND10N06
Symbol Micros:
TVND10n06
Case : TO252
N-MOSFET 10A 60V 35W 0.3Ω
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Parameters
Open channel resistance: | 300mOhm |
Max. drain current: | 10A |
Max. power loss: | 35W |
Case: | TO252 |
Manufacturer: | STMicroelectronics |
Max. drain-source voltage: | 60V |
Transistor type: | OMNI-FET |
Manufacturer:: ST
Manufacturer part number: VND10N06 RoHS
Case style: TO252t/r
Datasheet
In stock:
40 pcs.
Quantity of pcs. | 1+ | 3+ | 10+ | 50+ | 200+ |
---|---|---|---|---|---|
Net price (EUR) | 1,3895 | 1,0618 | 0,8789 | 0,7696 | 0,7316 |
Manufacturer:: ST
Manufacturer part number: VND10N06TR-E
Case style: TO252
External warehouse:
185000 pcs.
Quantity of pcs. | 2500+ (Need a significantly larger quantity? Ask for price). |
---|---|
Net price (EUR) | 0,7316 |
Manufacturer:: ST
Manufacturer part number: VND10N06TR-E
Case style: TO252
External warehouse:
7500 pcs.
Quantity of pcs. | 2500+ (Need a significantly larger quantity? Ask for price). |
---|---|
Net price (EUR) | 0,7471 |
Open channel resistance: | 300mOhm |
Max. drain current: | 10A |
Max. power loss: | 35W |
Case: | TO252 |
Manufacturer: | STMicroelectronics |
Max. drain-source voltage: | 60V |
Transistor type: | OMNI-FET |
Operating temperature (range): | -55°C ~ 150°C |
Mounting: | SMD |
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