XPH3R114MC,L1XHQ(O

Symbol Micros: TXPH3R114MC,L1XHQ

346303

TXPH3R114MC,L1XHQ

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Case : SOP08 Advance (5x5)

Datasheet

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Power Field-Effect Transistors MOSFET P-CH 40V 100A(Ta) 960mW (Ta), 170W (Tc) Surface Mount 8-SOP Advance (5x5);

Any questions? We will be happy to answer.
Write sales // micros.com.pl or call: +48 785 054 437

Parameters

Open channel resistance:	3,1mOhm
Max. drain current:	100A
Max. power loss:	960mW
Case:	SOP08 Advance (5x5)
Manufacturer:	Toshiba
Max. drain-source voltage:	40V
Max. drain-gate voltage:	10V

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• Parameters

Open channel resistance:	3,1mOhm
Max. drain current:	100A
Max. power loss:	960mW
Case:	SOP08 Advance (5x5)
Manufacturer:	Toshiba
Max. drain-source voltage:	40V
Max. drain-gate voltage:	10V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	SMD

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