ZXMN10B08E6

Symbol Micros: TZXMN10b08e6
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Case : SOT23-6
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N-MOSFET 1.6A 100V 1.1W 0.23Ω
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Parameters
Open channel resistance: 500mOhm
Max. drain current: 1,9A
Max. power loss: 1,7W
Case: SOT23-6
Manufacturer: DIODES
Max. drain-source voltage: 100V
Transistor type: N-MOSFET
Manufacturer:: DIODES/ZETEX Manufacturer part number: ZXMN10B08E6TA Pbf 10B8 Case style: SOT23-6/t/r Datasheet
In stock:
36 pcs.
Quantity of pcs. 2+ 10+ 50+ 200+ 500+
Net price (EUR) 0,6422 0,4031 0,3164 0,2883 0,2789
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Packaging:
500
Open channel resistance: 500mOhm
Max. drain current: 1,9A
Max. power loss: 1,7W
Case: SOT23-6
Manufacturer: DIODES
Max. drain-source voltage: 100V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD

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