ZXMN10B08E6
Symbol Micros:
TZXMN10b08e6
Case : SOT23-6
N-MOSFET 1.6A 100V 1.1W 0.23Ω
Parameters
| Open channel resistance: | 500mOhm |
| Max. drain current: | 1,9A |
| Max. power loss: | 1,7W |
| Case: | SOT23-6 |
| Manufacturer: | DIODES |
| Max. drain-source voltage: | 100V |
| Transistor type: | N-MOSFET |
Manufacturer:: DIODES/ZETEX
Manufacturer part number: ZXMN10B08E6TA Pbf 10B8
Case style: SOT23-6/t/r
Datasheet
In stock:
36 pcs.
| Quantity of pcs. | 2+ | 10+ | 50+ | 200+ | 500+ |
|---|---|---|---|---|---|
| Net price (EUR) | 0,6288 | 0,3960 | 0,3120 | 0,2832 | 0,2736 |
Manufacturer:: DIODES/ZETEX
Manufacturer part number: ZXMN10B08E6QTA
Case style: SOT23-6
External warehouse:
3000 pcs.
| Quantity of pcs. | 3000+ (Need a significantly larger quantity? Ask for price). |
|---|---|
| Net price (EUR) | 0,2736 |
Manufacturer:: DIODES/ZETEX
Manufacturer part number: ZXMN10B08E6TA
Case style: SOT23-6
External warehouse:
3000 pcs.
| Quantity of pcs. | 3000+ (Need a significantly larger quantity? Ask for price). |
|---|---|
| Net price (EUR) | 0,2736 |
| Open channel resistance: | 500mOhm |
| Max. drain current: | 1,9A |
| Max. power loss: | 1,7W |
| Case: | SOT23-6 |
| Manufacturer: | DIODES |
| Max. drain-source voltage: | 100V |
| Transistor type: | N-MOSFET |
| Max. gate-source Voltage: | 20V |
| Operating temperature (range): | -55°C ~ 150°C |
| Mounting: | SMD |
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