SI2301BDS

Symbol Micros: TSI2301bds
Contractor Symbol:
Case : SOT23
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Transistor P-Channel MOSFET; 20V; 8V; 150mOhm; 2,2A; 700mW; -55°C ~ 150°C; Equivalent: SI2301BDS-T1-E3; SI2301BDS-T1-GE3;
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Parameters
Open channel resistance: 150mOhm
Max. drain current: 2,2A
Max. power loss: 700mW
Case: SOT23
Manufacturer: VISHAY
Max. drain-source voltage: 20V
Transistor type: P-MOSFET
Manufacturer:: Vishay Manufacturer part number: SI2301BDS-T1-E3 RoHS L1.. Case style: SOT23t/r Datasheet
In stock:
25 pcs.
Quantity of pcs. 3+ 10+ 50+ 200+ 650+
Net price (EUR) 0,3133 0,1999 0,1396 0,1209 0,1143
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Packaging:
650
Open channel resistance: 150mOhm
Max. drain current: 2,2A
Max. power loss: 700mW
Case: SOT23
Manufacturer: VISHAY
Max. drain-source voltage: 20V
Transistor type: P-MOSFET
Max. gate-source Voltage: 8V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD

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