SI2301CDS-T1-GE3

Symbol Micros: TSI2301cds

Case : SOT23

Transistor P-MOSFET; 20V; 8V; 142mOhm; 3,1A; 1,6W; -55°C ~ 150°C; Replacement: SI2301CDS-T1-GE3; SI2301CDS-T1-E3; SI2301CDS SOT23 VISHAY;

Parameters

Manufacturer:: Vishay Manufacturer part number: SI2301CDS-T1-GE3 RoHS Case style: SOT23t/r Datasheet

In stock:

7600 pcs.

Quantity of pcs.	5+	20+	100+	500+	3000+
Net price (EUR)	0,2975	0,1649	0,1097	0,0914	0,0852

Manufacturer:: Vishay Manufacturer part number: SI2301CDS-T1-GE3 Case style: SOT23

External warehouse:

540000 pcs.

Quantity of pcs.	3000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,0852

Manufacturer:: Vishay Manufacturer part number: SI2301CDS-T1-GE3 Case style: SOT23

External warehouse:

3000 pcs.

Quantity of pcs.	3000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,0852

Manufacturer:: - Manufacturer part number: SI2301CDS-T1-GE3 Case style: SOT23

External warehouse:

57000 pcs.

Quantity of pcs.	1+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,0852

Open channel resistance:	142mOhm
Max. drain current:	3,1A
Max. power loss:	1,6W
Case:	SOT23
Manufacturer:	VISHAY
Max. drain-source voltage:	20V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	8V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

Quantity of pcs.	3+	10+	50+	200+	650+
Net price (EUR)	0,3189	0,2035	0,1421	0,1230	0,1164

Quantity of pcs.	10+	50+	200+	1000+	3000+
Net price (EUR)	0,0852	0,0336	0,0196	0,0143	0,0131