SI2301CDS-T1-GE3

Symbol Micros: TSI2301cds
Contractor Symbol:
Case : SOT23
Transistor P-MOSFET; 20V; 8V; 142mOhm; 3,1A; 1,6W; -55°C ~ 150°C; Replacement: SI2301CDS-T1-GE3; SI2301CDS-T1-E3; SI2301CDS SOT23 VISHAY;
Parameters
Open channel resistance: 142mOhm
Max. drain current: 3,1A
Max. power loss: 1,6W
Case: SOT23
Manufacturer: VISHAY
Max. drain-source voltage: 20V
Transistor type: P-MOSFET
Manufacturer:: Vishay Manufacturer part number: SI2301CDS-T1-GE3 RoHS Case style: SOT23t/r Datasheet
In stock:
7600 pcs.
Quantity of pcs. 5+ 20+ 100+ 500+ 3000+
Net price (EUR) 0,2914 0,1616 0,1075 0,0895 0,0835
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Packaging:
3000
Manufacturer:: Vishay Manufacturer part number: SI2301CDS-T1-GE3 Case style: SOT23  
External warehouse:
450000 pcs.
Quantity of pcs. 3000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,0835
Add to comparison tool
Packaging:
3000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: - Manufacturer part number: SI2301CDS-T1-GE3 Case style: SOT23  
External warehouse:
57000 pcs.
Quantity of pcs. 1+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,0835
Add to comparison tool
Packaging:
3000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: Vishay Manufacturer part number: SI2301CDS-T1-E3 Case style: SOT23  
External warehouse:
9000 pcs.
Quantity of pcs. 3000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,1020
Add to comparison tool
Packaging:
3000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Open channel resistance: 142mOhm
Max. drain current: 3,1A
Max. power loss: 1,6W
Case: SOT23
Manufacturer: VISHAY
Max. drain-source voltage: 20V
Transistor type: P-MOSFET
Max. gate-source Voltage: 8V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD