2N7002 HXY MOSFET

Symbol Micros: T2N7002 HXY
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Case : SOT23
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Transistor N-Channel MOSFET; 60V; 20V; 3Ohm; 300mA; 350mW; -55°C ~ 150°C; Equivalent: 2N7002-7-F; 2N7002,215; 2N7002-T1-E3; 2N7002-T1-GE3; 2N7002TA; 2N7002LT1G; 2N7002LT3G; 2N7002LT7G; 2N7002H6327XTSA2; 2N7002-TP;
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Parameters
Open channel resistance: 3Ohm
Max. drain current: 300mA
Max. power loss: 350mW
Case: SOT23
Manufacturer: HXY MOSFET
Max. drain-source voltage: 60V
Transistor type: N-MOSFET
Manufacturer:: HXY MOSFET Manufacturer part number: 2N7002 RoHS Case style: SOT23t/r Datasheet
In stock:
3000 pcs.
Quantity of pcs. 10+ 50+ 400+ 3000+ 12000+
Net price (EUR) 0,0752 0,0289 0,0141 0,0112 0,0107
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Packaging:
3000
Open channel resistance: 3Ohm
Max. drain current: 300mA
Max. power loss: 350mW
Case: SOT23
Manufacturer: HXY MOSFET
Max. drain-source voltage: 60V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD

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