2N7002H6327XTSA2 Infineon

Symbol Micros: T2N7002h
Contractor Symbol:
Case : SOT363
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N-MOSFET 60V 0.3A
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Parameters
Open channel resistance: 4Ohm
Max. drain current: 300mA
Max. power loss: 500mW
Case: SOT363
Manufacturer: Infineon Technologies
Max. drain-source voltage: 60V
Transistor type: N-MOSFET
Manufacturer:: Infineon Manufacturer part number: 2N7002H6327XTSA2 RoHS Case style: SOT363 t/r Datasheet
In stock:
17910 pcs.
Quantity of pcs. 5+ 20+ 100+ 500+ 3000+
Net price (EUR) 0,2155 0,1094 0,0663 0,0525 0,0479
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Packaging:
3000
Open channel resistance: 4Ohm
Max. drain current: 300mA
Max. power loss: 500mW
Case: SOT363
Manufacturer: Infineon Technologies
Max. drain-source voltage: 60V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD

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