BSH111

Symbol Micros: TBSH111
Contractor Symbol:
Case : SOT23
Transistor N-Channel MOSFET; 55V; 55V; 10V; 8Ohm; 335mA; 830mW; -65°C ~ 150°C;
Parameters
Open channel resistance: 8Ohm
Max. drain current: 335mA
Max. power loss: 830mW
Case: SOT23
Manufacturer: NXP
Max. drain-source voltage: 55V
Max. drain-gate voltage: 55V
Manufacturer:: NXP Manufacturer part number: BSH111 RoHS Case style: SOT23t/r Datasheet
In stock:
100 pcs.
Quantity of pcs. 2+ 10+ 50+ 200+ 500+
Net price (EUR) 0,5684 0,3420 0,2618 0,2351 0,2271
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Packaging:
500
Manufacturer:: Nexperia Manufacturer part number: BSH111BKR Case style: SOT23  
External warehouse:
81000 pcs.
Quantity of pcs. 6000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,2271
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Packaging:
3000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: Nexperia Manufacturer part number: BSH111BKR Case style: SOT23  
External warehouse:
222000 pcs.
Quantity of pcs. 6000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,2271
Add to comparison tool
Packaging:
3000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: Nexperia Manufacturer part number: BSH111BKR Case style: SOT23  
External warehouse:
30000 pcs.
Quantity of pcs. 6000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,2271
Add to comparison tool
Packaging:
3000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Open channel resistance: 8Ohm
Max. drain current: 335mA
Max. power loss: 830mW
Case: SOT23
Manufacturer: NXP
Max. drain-source voltage: 55V
Max. drain-gate voltage: 55V
Transistor type: N-MOSFET
Max. gate-source Voltage: 10V
Operating temperature (range): -65°C ~ 150°C
Mounting: SMD