BSH111
Symbol Micros:
TBSH111
Case : SOT23
Transistor N-Channel MOSFET; 55V; 55V; 10V; 8Ohm; 335mA; 830mW; -65°C ~ 150°C;
Parameters
Open channel resistance: | 8Ohm |
Max. drain current: | 335mA |
Max. power loss: | 830mW |
Case: | SOT23 |
Manufacturer: | NXP |
Max. drain-source voltage: | 55V |
Max. drain-gate voltage: | 55V |
Manufacturer:: NXP
Manufacturer part number: BSH111 RoHS
Case style: SOT23t/r
Datasheet
In stock:
100 pcs.
Quantity of pcs. | 2+ | 10+ | 50+ | 200+ | 500+ |
---|---|---|---|---|---|
Net price (EUR) | 0,5684 | 0,3420 | 0,2618 | 0,2351 | 0,2271 |
Manufacturer:: Nexperia
Manufacturer part number: BSH111BKR
Case style: SOT23
External warehouse:
81000 pcs.
Quantity of pcs. | 6000+ (Need a significantly larger quantity? Ask for price). |
---|---|
Net price (EUR) | 0,2271 |
Manufacturer:: Nexperia
Manufacturer part number: BSH111BKR
Case style: SOT23
External warehouse:
222000 pcs.
Quantity of pcs. | 6000+ (Need a significantly larger quantity? Ask for price). |
---|---|
Net price (EUR) | 0,2271 |
Manufacturer:: Nexperia
Manufacturer part number: BSH111BKR
Case style: SOT23
External warehouse:
30000 pcs.
Quantity of pcs. | 6000+ (Need a significantly larger quantity? Ask for price). |
---|---|
Net price (EUR) | 0,2271 |
Open channel resistance: | 8Ohm |
Max. drain current: | 335mA |
Max. power loss: | 830mW |
Case: | SOT23 |
Manufacturer: | NXP |
Max. drain-source voltage: | 55V |
Max. drain-gate voltage: | 55V |
Transistor type: | N-MOSFET |
Max. gate-source Voltage: | 10V |
Operating temperature (range): | -65°C ~ 150°C |
Mounting: | SMD |
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