BSH111

Symbol Micros: TBSH111
Contractor Symbol:
Case : SOT23
Technical drawing Add to favourites
Transistor N-Channel MOSFET; 55V; 55V; 10V; 8Ohm; 335mA; 830mW; -65°C ~ 150°C;
Any questions? We will be happy to answer.
Write sales // micros.com.pl or call: +48 785 054 437
Parameters
Open channel resistance: 8Ohm
Max. drain current: 335mA
Max. power loss: 830mW
Case: SOT23
Manufacturer: NXP
Max. drain-source voltage: 55V
Max. drain-gate voltage: 55V
Manufacturer:: NXP Manufacturer part number: BSH111 RoHS Case style: SOT23t/r Datasheet
In stock:
100 pcs.
Quantity of pcs. 2+ 10+ 50+ 200+ 500+
Net price (EUR) 0,5634 0,3390 0,2595 0,2331 0,2251
Add to comparison tool
Packaging:
500
Open channel resistance: 8Ohm
Max. drain current: 335mA
Max. power loss: 830mW
Case: SOT23
Manufacturer: NXP
Max. drain-source voltage: 55V
Max. drain-gate voltage: 55V
Transistor type: N-MOSFET
Max. gate-source Voltage: 10V
Operating temperature (range): -65°C ~ 150°C
Mounting: SMD

Symbol Micros

Contractor Symbol

Add another Contractor Symbol

Cancel Delete All Contractor Symbols

Add Symbol


Symbol Micros

Contractor Symbol

Add another Contractor Symbol

Cancel All Contractor Symbols