DGC40H65M2 DONGHAI
Symbol Micros:
TDGC40f65m
Case : TO247
Transistor IGBT ; 650V; 30V; 80A; 160A; 280W; 5,0V~7,0V; 84nC; -45°C~175°C;
Parameters
Gate charge: | 84nC |
Max. dissipated power: | 280W |
Max. collector current: | 80A |
Max collector current (impulse): | 160A |
Forvard volatge [Vgeth]: | 5,0V ~ 7,0V |
Case: | TO247 |
Manufacturer: | Donghai |
Gate charge: | 84nC |
Max. dissipated power: | 280W |
Max. collector current: | 80A |
Max collector current (impulse): | 160A |
Forvard volatge [Vgeth]: | 5,0V ~ 7,0V |
Case: | TO247 |
Manufacturer: | Donghai |
Collector-emitter voltage: | 650V |
Operating temperature (range): | -45°C ~ 175°C |
Gate-emitter voltage: | 30V |
Mounting: | THT |
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