IRF1010E

Symbol Micros: TIRF1010
Contractor Symbol:
Case : TO220
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Transistor N-Channel MOSFET; 60V; 20V; 12mOhm; 84A; 200W; -55°C ~ 175°C;
Parameters
Open channel resistance: 12mOhm
Max. drain current: 84A
Max. power loss: 200W
Case: TO220
Manufacturer: International Rectifier
Max. drain-source voltage: 60V
Transistor type: N-MOSFET
Manufacturer:: International Rectifier Manufacturer part number: IRF1010EPBF RoHS Case style: TO220 Datasheet
In stock:
375 pcs.
Quantity of pcs. 1+ 5+ 50+ 200+ 350+
Net price (EUR) 1,1653 0,7729 0,5958 0,5623 0,5551
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Packaging:
50
Manufacturer:: Infineon Manufacturer part number: IRF1010EPBF Case style: TO220  
External warehouse:
9377 pcs.
Quantity of pcs. 300+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,5551
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Packaging:
100
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: Infineon Manufacturer part number: IRF1010EPBF Case style: TO220  
External warehouse:
300 pcs.
Quantity of pcs. 10+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,5934
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Packaging:
10
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Open channel resistance: 12mOhm
Max. drain current: 84A
Max. power loss: 200W
Case: TO220
Manufacturer: International Rectifier
Max. drain-source voltage: 60V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 175°C
Mounting: THT

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