IRF640N
Symbol Micros:
TIRF640n
Case :
N-MOSFET 18A 200V 150W 0.15Ω
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Parameters
Open channel resistance: | 150mOhm |
Max. drain current: | 18A |
Max. power loss: | 150W |
Case: | TO220 |
Manufacturer: | Infineon (IRF) |
Max. drain-source voltage: | 200V |
Transistor type: | N-MOSFET |
Manufacturer:: Infineon
Manufacturer part number: IRF640NPBF RoHS
Case style: TO220
In stock:
950 pcs.
Quantity of pcs. | 1+ | 3+ | 10+ | 50+ | 200+ |
---|---|---|---|---|---|
Net price (EUR) | 1,0180 | 0,7479 | 0,6002 | 0,5148 | 0,4848 |
Manufacturer:: Infineon
Manufacturer part number: IRF640NPBF
Case style: TO220
External warehouse:
2110 pcs.
Quantity of pcs. | 10+ (Inappropriate quantity? Ask for a different one). |
---|---|
Net price (EUR) | 0,4848 |
Manufacturer:: Infineon
Manufacturer part number: IRF640NPBF
Case style: TO220
External warehouse:
125 pcs.
Quantity of pcs. | 1+ (Inappropriate quantity? Ask for a different one). |
---|---|
Net price (EUR) | 0,6652 |
Open channel resistance: | 150mOhm |
Max. drain current: | 18A |
Max. power loss: | 150W |
Case: | TO220 |
Manufacturer: | Infineon (IRF) |
Max. drain-source voltage: | 200V |
Transistor type: | N-MOSFET |
Max. gate-source Voltage: | 20V |
Operating temperature (range): | -55°C ~ 175°C |
Mounting: | THT |
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