IRF640N

Symbol Micros: TIRF640n
Contractor Symbol:
Case : TO220
N-MOSFET 18A 200V 150W 0.15Ω
Parameters
Open channel resistance: 150mOhm
Max. drain current: 18A
Max. power loss: 150W
Case: TO220
Manufacturer: Infineon (IRF)
Max. drain-source voltage: 200V
Transistor type: N-MOSFET
Manufacturer:: Infineon Manufacturer part number: IRF640NPBF RoHS Case style: TO220  
In stock:
683 pcs.
Quantity of pcs. 2+ 10+ 50+ 200+ 1000+
Net price (EUR) 0,8804 0,5581 0,4414 0,4017 0,3830
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Packaging:
50/1000
Manufacturer:: Infineon Manufacturer part number: IRF640NPBF Case style: TO220  
External warehouse:
10900 pcs.
Quantity of pcs. 1000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,3830
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Packaging:
1000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: Infineon Manufacturer part number: IRF640NPBF Case style: TO220  
External warehouse:
11730 pcs.
Quantity of pcs. 400+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,3830
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Packaging:
100
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: Infineon Manufacturer part number: IRF640NPBF Case style: TO220  
External warehouse:
2420 pcs.
Quantity of pcs. 1+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,3873
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Packaging:
1
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Open channel resistance: 150mOhm
Max. drain current: 18A
Max. power loss: 150W
Case: TO220
Manufacturer: Infineon (IRF)
Max. drain-source voltage: 200V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 175°C
Mounting: THT