IRF640N

Symbol Micros: TIRF640n
Contractor Symbol:
Case :  
N-MOSFET 18A 200V 150W 0.15Ω
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Parameters
Open channel resistance: 150mOhm
Max. drain current: 18A
Max. power loss: 150W
Case: TO220
Manufacturer: Infineon (IRF)
Max. drain-source voltage: 200V
Transistor type: N-MOSFET
Manufacturer:: Infineon Manufacturer part number: IRF640NPBF RoHS Case style: TO220  
In stock:
950 pcs.
Quantity of pcs. 1+ 3+ 10+ 50+ 200+
Net price (EUR) 1,0180 0,7479 0,6002 0,5148 0,4848
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Packaging:
50/1000
Manufacturer:: Infineon Manufacturer part number: IRF640NPBF Case style: TO220  
External warehouse:
2110 pcs.
Quantity of pcs. 10+ (Inappropriate quantity? Ask for a different one).
Net price (EUR) 0,4848
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Packaging:
10
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: Infineon Manufacturer part number: IRF640NPBF Case style: TO220  
External warehouse:
125 pcs.
Quantity of pcs. 1+ (Inappropriate quantity? Ask for a different one).
Net price (EUR) 0,6652
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Packaging:
50
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Open channel resistance: 150mOhm
Max. drain current: 18A
Max. power loss: 150W
Case: TO220
Manufacturer: Infineon (IRF)
Max. drain-source voltage: 200V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 175°C
Mounting: THT