IRF640NPBF HXY MOSFET
Symbol Micros:
TIRF640n HXY
Case : TO220
Transistor N-Channel MOSFET; 200V; 20V; 145mOhm; 18A; 125W; -55°C ~ 150°C; Equivalent: IRF640PBF; IRF640PBF-BE3; IRF640NPBF; SP001570078;
Any questions? We will be happy to answer.
Write sales // micros.com.pl or call: +48 785 054 437
Write sales // micros.com.pl or call: +48 785 054 437
Parameters
Open channel resistance: | 145mOhm |
Max. drain current: | 18A |
Max. power loss: | 125W |
Case: | TO220 |
Manufacturer: | HXY MOSFET |
Max. drain-source voltage: | 200V |
Transistor type: | N-MOSFET |
Open channel resistance: | 145mOhm |
Max. drain current: | 18A |
Max. power loss: | 125W |
Case: | TO220 |
Manufacturer: | HXY MOSFET |
Max. drain-source voltage: | 200V |
Transistor type: | N-MOSFET |
Max. gate-source Voltage: | 20V |
Operating temperature (range): | -55°C ~ 150°C |
Mounting: | THT |
Add Symbol
Cancel
All Contractor Symbols