SI2301CDS-T1-GE3

Symbol Micros: TSI2301cds
Contractor Symbol:
Case : SOT23
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Transistor P-MOSFET; 20V; 8V; 142mOhm; 3,1A; 1,6W; -55°C ~ 150°C; Replacement: SI2301CDS-T1-GE3; SI2301CDS-T1-E3; SI2301CDS SOT23 VISHAY;
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Parameters
Open channel resistance: 142mOhm
Max. drain current: 3,1A
Max. power loss: 1,6W
Case: SOT23
Manufacturer: VISHAY
Max. drain-source voltage: 20V
Transistor type: P-MOSFET
Manufacturer:: Vishay Manufacturer part number: SI2301CDS-T1-GE3 RoHS Case style: SOT23t/r Datasheet
In stock:
1600 pcs.
Quantity of pcs. 5+ 20+ 100+ 500+ 3000+
Net price (EUR) 0,2996 0,1655 0,1100 0,0918 0,0854
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Packaging:
3000
Open channel resistance: 142mOhm
Max. drain current: 3,1A
Max. power loss: 1,6W
Case: SOT23
Manufacturer: VISHAY
Max. drain-source voltage: 20V
Transistor type: P-MOSFET
Max. gate-source Voltage: 8V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD

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